Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors

Abstract Two-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, need integrated high-quality dielectrics—which are challenging deposit. Here we show that single-crystal strontium titanate—a high- κ perovskite oxide—can two-dimensional using van der Waals forces. Strontium titanate thin films grown on a sacrificial layer, lifted off and then transferred onto molybdenum disulfide tungsten diselenide make n-type p-type transistors, respectively. The transistors exhibit an on/off current ratio of 10 8 at supply voltage 1 V minimum subthreshold swing 66 mV dec −1 . We also the create low-power complementary metal–oxide–semiconductor inverter circuits.